The transistor has been called the greatest invention of the 20th century – it enabled the electronics systems that have shaped the world we live in. Today’s nanotransistors are a high volume, high impact success of the nanotechnology revolution. This is a course on how this scientifically interesting and technologically important device operates. The course is designed for anyone seeking a sound, physical, intuitive understanding of how modern transistors operate. Important technology considerations and applications of transistors are also discussed. The focus is on MOSFETs for digital logic, but analog applications and other types of transistors are briefly considered.
This course is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Topics include device metrics for digital and analog circuits, traditional MOSFET theory, the virtual source model, 1D and 2D electrostatics, Landauer/transmission approach to nanotransistors, the limits of MOSFETs, as well as a quick look at HEMTs, bipolar transistors, and compact circuit models. The course should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.
This course is part of a Purdue initiative that aims to complement the expertise that students develop with the breadth at the edges needed to work effectively in today's multidisciplinary environment. These serious short courses require few prerequisites and provide a general framework that can be filled in with self-study when needed.
Students taking this course will be required to complete two (2) proctored exams using the edX online Proctortrack software. Completed exams will be scanned and sent using Gradescope for grading by Professor Lundstrom. During the proctored exams, this course will follow the Purdue University ECE policy, the calculator must be a Texas Instruments TI-30X IIS scientific calculator. ONLY the Texas Instruments TI-30X IIS scientific calculator will be allowed.
Unit 1: Transistors and Circuits
L1.1: The MOSFET as a black box L1.2: Digital circuits L1.3: Analog/RF circuits L1.4: MOSFET device metrics L1.5: Compact models L1.6: Unit 1 Recap
Unit 2: Essential Physics of the MOSFET
L2.1: Energy Band Diagram Review L2.2: Energy Band View of MOSFETs L2.3: MOSFET IV Theory L2.4: The Square Law MOSFET L2.5: The Virtual Source model L2.6: Unit 2 Recap
Unit 3: MOS Electrostatics
L3.1: The Energy Band Diagram Approach L3.2: The Depletion Approximation L3.3: Gate Voltage and Surface Potential L3.4 Flat-band Voltage L3.5: MOS CV L3.6: The Mobile Charge vs. Surface Potential L3.7: The Mobile Charge vs. Gate Voltage L3.8: 2D MOS Electrostatics L3.9: The VS model revisited L3.10: Unit 3 Recap
Unit 4: Transmission theory of the MOSFET
L4.1: Landauer Approach L4.2: Landauer at Low and High Bias L4.3 The Ballistic MOSFET L4.4 Velocity at the Virtual Source L4.5: Transmission Theory of the MOSFET L4.6: The VS model Revisited L4.7: Analysis of Experiments L4.8: Unit 4 Recap
Unit 5: Additional Topics
L5.1: Limits of MOSFETs L5.2: Power MOSFETs L5.3: High Electron Mobility Transistors (HEMTs) L5.4: Review of PN Junctions L5.5: Heterostructure Bipolar Transistors (HBTs) L5.6: A Second Look at Compact models L5.7: Unit 5 RecapL5.5: Compact models – another look