Class Central is learner-supported. When you buy through links on our site, we may earn an affiliate commission.

The Hong Kong University of Science and Technology

Principle of Semiconductor Devices Part II: Field Effect Transistors and MOSFETs

The Hong Kong University of Science and Technology via edX


As a topic of study, semiconductor devices offer a unique challenge due to the complex mathematics involved. In this course, we take a more intuitive approach to explore the underlying concepts. Eschewing mathematics, we use engaging animations to help you visualize the working principles of many common semiconductor devices.

Whether you are completely new to the subject or an experienced engineer, this course will give you a different perspective and a new way to look at the behaviors of semiconductor devices.

Reducing the reliance of equations does not mean the depth of the material is sacrificed. In fact, the course provides even more in-depth explanations of key concepts. We shift the focus from quantitatively evaluating the behavior of semiconductor devices to intuitively visualizing the semiconductor device actions.

Follow the approach from Part I, we expand the understanding from PN junction diodes and BJTs to MOS capacitors, charge coupled devices and MOSFETs. In addition to describing the theory of MOSFETs, the course covers some more recent development of non-traditional nano-CMOS transistors. Besides covering the existing technologies, the course will also enable you to project the development of the industry in the near future.


Week 1: MOS capacitor charges and capacitances
Introduction to the MOS capacitor structures, its charge and capacitance characteristics

Week 2: Charge coupled device, CMOS active-pixel sensor and MOS capacitor with a source
The operation principle of charge coupled devices, CMOS active pixel sensor for digital camera applications. The effect of adding a source to the MOS capacitor.

Week 3: Classical MOSFET I-V characteristics
Derivation of the classical MOSFET equations and the subthreshold characteristics.

Week 4: Mobility degradation and carrier velocity saturation
Correction to the classical pinchoff model by including the effect of mobility degradation and carrier velocity saturation.

Week 5: CMOS device scaling and short channel MOSFET
The effect of transistor scaling, short channel effects and the problems of small transistor design.

Week 6: Non-traditional nano-CMOS transistors
Introduction to the state-of-the-art transistors structure including SOI technology, FinFET, multi-gate MOSFET, tunnelling transistor and transistors based on 2-D materials.

Week 7: Final Exam

Taught by

Mansun Chan

Related Courses


5.0 rating, based on 4 reviews

Start your review of Principle of Semiconductor Devices Part II: Field Effect Transistors and MOSFETs

  • Anonymous
    I took the course with an MSc in EE as a refresher and haven’t regretted it. A very high quality course that gives learners intuitive insight into the operating principles of modern semiconductor devices. Not too heavy on math but goes deep enough to give you the tools you need in practical engineering work. The animations and the visually engaging presentation style as well as the clear explanations and the comprehensive and challenging concept check questions and quizzes ensure the material sinks in solidly. The course also covers state-of-the-art CMOS technology and looks into future directions, topics I’d sorely missed from my previous studies. Hats off to the professor and the team behind this course. Fully recommended.
  • Anonymous

    Anonymous completed this course.

    I am an NIT Srinagar Student pursuing Masters in Microelectronics. I have found this course very useful & highly informative. This is one of the best online course I have come across that discusses MOSFETs in quite a detail with an introduction to various new research domain MOSFETs. I would recommend it for all those who are interested in MOSFET device physics & engineering. Also, I would like to request the lecturer of this course to further develop an advanced course on advanced MOSFET physics including TFET, CNTs, JLT, etc using Quantum/ NEGF Domain.
  • Anonymous

    Anonymous completed this course.

    I am an Electrical Engineering major at the University of Massachusetts Amherst going into my third year and will be taking a semiconductor physics course this fall. I used this class to prepare a little before hand and am glad that I did so. The animations were incredibly helpful and the questions were very thought provoking. I would only suggest less multiple choice questions and more that involve calculation and filling in a blank because I found myself getting lazy at times and guessing over and over on questions that I was struggling with.
  • Anonymous

    Anonymous completed this course.

    Thanks for the team effort. Learn a lot. Semiconductor is still toooooo difficult. From the course, still can get a vivid and clearer picture of transistor device from the fundamental as well as deep knowledges to state-of-art introduction to techniques with advantages and drawbacks. ps, quiz is instructive.

Never Stop Learning!

Get personalized course recommendations, track subjects and courses with reminders, and more.

Sign up for free