The transistor has been called the greatest invention of the 20th century – it enabled the electronics systems that have shaped the world we live in. Today’s nanotransistors are a high volume, high impact success of the nanotechnology revolution. This is a course on how this scientifically interesting and technologically important device operates.
The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and applications. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how modern transistors, specifically MOSFETS, operate. This course covers the traditional theory of MOSFETs with micrometer to sub-micrometer channel lengths, as well as modern, nanoscale MOSFETs with channel lengths of 20 nanometers (0.02 micrometers) or so. The course should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.
This course is part of a Purdue initiative that aims to complement the expertise that students develop with the breadth at the edges needed to work effectively in today's multidisciplinary environment. These serious short courses require few prerequisites and provide a general framework that can be filled in with self-study when needed.
Week 1: Transistors, compact models, and circuits
L1.1: Unit 1 Introduction L1.2: The MOSFET as a black box L1.3: MOSFET device metrics L1.4: Compact models L1.5: Digital circuits L1.6: Analog/RF circuits
Week 2: Essential physics of the MOSFET
L2.1: Unit 2 Introduction L2.2: Energy Band View of MOSFETs L2.3: Traditional IV Theory L2.4: The Virtual Source model
Week 3: MOS Electrostatics
L3.1: Unit 3 Introduction L3.2: The depletion approximation L3.3: The gate voltage and surface potential L3.4 Flatband voltage L3.5: Mobile charge: Bulk MOS L3.6 Mobile charge: ETSOI L3.7: 2D MOS electrostatics L3.8: The VS model revisited L3.9: Unit 3 Summary
Week 4: Transmission theory of the MOSFET
L4.1: Unit 4 Introduction L4.2: Landauer Approach L4.4: The ballistic MOSFET L4.3 Transmission, mean-free-path and mobility L4.4: Transmission theory of the MOSFET L4.5: Analysis of experiments L4.6: Connection to VS model Week 5: Additional topics
L5.1: Limits of MOSFETs L5.2: Power MOSFETs L5.3: High Electron Mobility Transistors (HEMTs) L5.4: Quick look at bipolar transistors L5.5: Compact models – another look